tzq5221b...tzq5267b vishay semiconductors rev. a4, 12-mar-01 1 (6) www.vishay.com document number 85612 silicon epitaxial planar zdiodes features very sharp reverse characteristic low reverse current level available with tighter tolerances very high stability low noise applications voltage stabilization 96 12009 order instruction type ordering code remarks tzq5221b tzq5221bgs08 tape and reel (2.500 pcs) tzq5221b tzq5221bgs18 tape and reel (10.000 pcs) absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit power dissipation r thja 300k/w p v 500 mw zcurrent i z p v /v z ma junction temperature t j 175 c storage temperature range t stg 65...+175 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient on pc board 50 mmx50 mmx1.6 mm r thja 500 k/w electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =200ma v f 1.5 v
tzq5221b...tzq5267b vishay semiconductors rev. a4, 12-mar-01 2 (6) www.vishay.com document number 85612 type v znom 1) i zt for r zjt r zjk at i zk i r at v r tk vz v ma ma a v %/k tzq5221b 2.4 20 < 30 < 1200 0.25 < 100 1.0 < 0.085 tzq5222b 2.5 20 < 30 < 1250 0.25 < 100 1.0 < 0.085 tzq5223b 2.7 20 < 30 < 1300 0.25 < 75 1.0 < 0.080 tzq5224b 2.8 20 < 30 < 1400 0.25 < 75 1.0 < 0.080 tzq5225b 3.0 20 < 29 < 1600 0.25 < 50 1.0 < 0.075 tzq5226b 3.3 20 < 28 < 1600 0.25 < 25 1.0 < 0.070 tzq5227b 3.6 20 < 24 < 1700 0.25 < 15 1.0 < 0.065 tzq5228b 3.9 20 < 23 < 1900 0.25 < 10 1.0 < 0.060 tzq5229b 4.3 20 < 22 < 2000 0.25 < 5 1.0 < 0.055 tzq5230b 4.7 20 < 19 < 1900 0.25 < 5 2.0 < 0.030 tzq5231b 5.1 20 < 17 < 1600 0.25 < 5 2.0 < 0.030 tzq5232b 5.6 20 < 11 < 1600 0.25 < 5 3.0 < +0.038 tzq5233b 6.0 20 < 7 < 1600 0.25 < 5 3.5 < +0.038 tzq5234b 6.2 20 < 7 < 1000 0.25 < 5 4.0 < +0.045 tzq5235b 6.8 20 < 5 < 750 0.25 < 3 5.0 < +0.050 tzq5236b 7.5 20 < 6 < 500 0.25 < 3 6.0 < +0.058 tzq5237b 8.2 20 < 8 < 500 0.25 < 3 6.5 < +0.062 tzq5238b 8.7 20 < 8 < 600 0.25 < 3 6.5 < +0.065 tzq5239b 9.1 20 < 10 < 600 0.25 < 3 7.0 < +0.068 tzq5240b 10 20 < 17 < 600 0.25 < 3 8.0 < +0.075 tzq5241b 11 20 < 22 < 600 0.25 < 2 8.4 < +0.076 tzq5242b 12 20 < 30 < 600 0.25 < 1 9.1 < +0.077 tzq5243b 13 9.5 < 13 < 600 0.25 < 0.5 9.9 < +0.079 tzq5244b 14 9.0 < 15 < 600 0.25 < 0.1 10 < +0.082 tzq5245b 15 8.5 < 16 < 600 0.25 < 0.1 11 < +0.082 tzq5246b 16 7.8 < 17 < 600 0.25 < 0.1 12 < +0.083 tzq5247b 17 7.4 < 19 < 600 0.25 < 0.1 13 < +0.084 tzq5248b 18 7.0 < 21 < 600 0.25 < 0.1 14 < +0.085 tzq5249b 19 6.6 < 23 < 600 0.25 < 0.1 14 < +0.086 tzq5250b 20 6.2 < 25 < 600 0.25 < 0.1 15 < +0.086 tzq5251b 22 5.6 < 29 < 600 0.25 < 0.1 17 < +0.087 tzq5252b 24 5.2 < 33 < 600 0.25 < 0.1 18 < +0.088 tzq5253b 25 5.0 < 35 < 600 0.25 < 0.1 19 < +0.089 tzq5254b 27 4.6 < 41 < 600 0.25 < 0.1 21 < +0.090 tzq5255b 28 4.5 < 44 < 600 0.25 < 0.1 21 < +0.091 tzq5256b 30 4.2 < 49 < 600 0.25 < 0.1 23 < +0.091 tzq5257b 33 3.8 < 58 < 700 0.25 < 0.1 25 < +0.092 tzq5258b 36 3.4 < 70 < 700 0.25 < 0.1 27 < +0.093 tzq5259b 39 3.2 < 80 < 800 0.25 < 0.1 30 < +0.094 tzq5260b 43 3.0 < 93 < 900 0.25 < 0.1 33 < +0.095 tzq5261b 47 2.7 < 105 < 1000 0.25 < 0.1 36 < +0.095 tzq5262b 51 2.5 < 125 < 1100 0.25 < 0.1 39 < +0.096 tzq5263b 56 2.2 < 150 < 1300 0.25 < 0.1 43 < +0.096 tzq5264b 60 2.1 < 170 < 1400 0.25 < 0.1 46 < +0.097 tzq5265b 62 2.0 < 185 < 1400 0.25 < 0.1 47 < +0.097 tzq5266b 68 1.8 < 230 < 1600 0.25 < 0.1 52 < +0.097 tzq5267b 75 1.7 < 270 < 1700 0.25 < 0.1 56 < +0.098 1.)based on dc measurement at thermal equilibrium; case temperature maintained at 30 c 2 c.
tzq5221b...tzq5267b vishay semiconductors rev. a4, 12-mar-01 3 (6) www.vishay.com document number 85612 characteristics (t j = 25 c unless otherwise specified) 0 40 80 120 160 0 100 300 400 500 600 p total power dissipation ( mw ) tot t amb ambient temperature ( 5 c ) 200 95 9602 200 figure 1. total power dissipation vs. ambient temperature 0 5 10 15 20 1 10 100 1000 v voltage change ( mv ) z v z z-voltage ( v ) 25 95 9598 i z =5ma t j =25 5 c figure 2. typical change of working voltage under operating conditions at t amb =25 c 60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v relative voltage change ztn t j junction temperature ( 5 c ) 240 95 9599 v ztn =v zt /v z (25 5 c) tk vz =10 10 4 /k 8 10 4 /k 4 10 4 /k 6 10 4 /k 4 10 4 /k 2 10 4 /k 2 10 4 /k 0 figure 3. typical change of working voltage vs. junction temperature 0102030 5 0 5 10 15 tk temperature coefficient of v ( 10 /k ) vz v z z-voltage ( v ) 50 95 9600 40 z 4 i z =5ma figure 4. temperature coefficient of vz vs. zvoltage 0 5 10 15 0 50 100 150 200 c diode capacitance ( pf ) d v z z-voltage ( v ) 25 95 9601 20 t j =25 5 c v r =2v figure 5. diode capacitance vs. zvoltage 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i forward current ( ma ) f v f forward voltage ( v ) t j =25 5 c figure 6. forward current vs. forward voltage
tzq5221b...tzq5267b vishay semiconductors rev. a4, 12-mar-01 4 (6) www.vishay.com document number 85612 04 8 1216 20 95 9604 0 20 40 60 80 100 i z-current ( ma ) z v z z-voltage ( v ) p tot =500mw t amb =25 5 c figure 7. zcurrent vs. zvoltage 15 20 25 30 0 10 20 30 40 50 i z-current ( ma ) z v z z-voltage ( v ) 35 95 9607 p tot =500mw t amb =25 5 c figure 8. zcurrent vs. zvoltage 0 5 10 15 20 1 10 100 1000 r differential z-resistance ( ) z v z z-voltage ( v ) 25 95 9606 t j =25 5 c i z =1ma 5ma 10ma figure 9. differential zresistance vs. zvoltage 1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( ms ) 95 9603 10 1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse r thja =300k/w t=t jmax t amb i zm =(v z +(v z 2 +4r zj t/z thp ) 1/2 )/(2r zj ) figure 10. thermal response
tzq5221b...tzq5267b vishay semiconductors rev. a4, 12-mar-01 5 (6) www.vishay.com document number 85612 dimensions in mm 96 12071
tzq5221b...tzq5267b vishay semiconductors rev. a4, 12-mar-01 6 (6) www.vishay.com document number 85612 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
|
